何翔,熊黎.基体温度和氩气压强对射频磁控溅射制备GZO薄膜性能的影响[J].中南民族大学学报自然科学版,2011,(4):
基体温度和氩气压强对射频磁控溅射制备GZO薄膜性能的影响
Influences of Substrate Temperature and Argon Pressure on Properties of GZO Thin Films Prepared by Radio Frequency Magnetron Sputtering
  
DOI:
中文关键词: 基体温度  氩气压强  GZO薄膜  透过率  电阻率
英文关键词: substrate temperature  argon pressure  GZO thin film  transmittance  resistivity
基金项目:武汉市重点科技攻关计划资助项目
作者:何翔  熊黎
摘要点击次数: 659
全文下载次数: 
中文摘要:
      采用射频磁控溅射方法,用Ga2O3含量为1%的ZnO做靶材,在不同基体温度和不同溅射压强的条件下制备了高质量的GZO透明导电薄膜.结果表明:基体温度和氩气压强对GZO薄膜的晶体结构、光电性能有较大影响.当温度为500℃,溅射气压为0.2pa时制备的GZO薄膜光电性能较优,方块电阻为7.8Ω/,电阻率为8.58×10^-4×·cm,可见光的平均透过率为89.1%.
英文摘要:
      High-quality Ga doped ZnO(GZO) thin films were prepared by radio frequency magnetron sputtering at different substrate temperature and Argon pressure by sputtering a GZO target with 1wt. % Ga2O3. The results show that substrate temperature and Argon pressure strongly affects crystal structure and photoelectric properties of GZO thin films. The GZO thin film deposited at substrate temperature of 500℃, a sputtering gas pressure of 0.2 Pa is the best performances as follows: square resistance is 7.8Ω/ , resistivity is 8.58 × 10^ -4Ω · cm, and average visible transmittance is 89.1%.
查看全文   查看/发表评论  下载PDF阅读器
关闭