钟志有,张腾,汪浩.基片温度对镓钛共掺杂氧化锌[J].中南民族大学学报自然科学版,2013,32(1):58-64
基片温度对镓钛共掺杂氧化锌
Influence of Substrate Temperature on Properties of Transparent Conducting Gallium and Titanium Doped Zinc Oxide Thin Films
  
DOI:10.12130/znmdzk.20130115
中文关键词: 氧化锌薄膜  掺杂  光电性能
英文关键词: zinc oxide thin films  doping  optical and electrical properties
基金项目:湖北省自然科学基金资助项目( 2011CDB418) ; 中南民族大学研究生创新基金资助项目( chxxyz120023) ; 中南民族大学学术团队基金资助项目( XTZ09003)
作者单位
钟志有,张腾,汪浩 中南民族大学电子信息工程学院武汉430074 
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中文摘要:
      以镓钛共掺杂氧化锌( GTZO) 陶瓷靶作为溅射源材料,采用射频磁控溅射技术在玻璃基片上制备了GTZO透明导电薄膜,通过X 射线衍射仪( XRD) 、可见-紫外光分光光度计和四探针仪等测试表征,研究了基片温度对GTZO 薄膜晶体结构、电学性质和光学性能的影响.结果表明: 所制备的GTZO 薄膜均为六角纤锌矿结构,并具有( 002) 择优取向,其结晶质量、晶粒尺寸、方块电阻、透过率、光学能隙以及品质因数都与基片温度密切相关,当基片温度为350 ℃时,GTZO 薄膜的品质因数最大,具有最佳的光电综合性能.
英文摘要:
      Gallium and titanium doped zinc oxide ( GTZO) thin films were deposited by radio-frequency magnetron sputtering method using a sintered ceramic target.The influence of substrate temperature on crystalline,optical and electrical properties of GTZO films was investigated by X-ray diffraction ( XRD) ,four-point probe and optical transmission spectroscopy. The results show that all the deposited films are polycrystalline with a hexagonal wurtzite structure and grow preferentially in the ( 002) direction. The structural,optical and electrical properties of the films are closely related to the substrate temperature.The GZTO film grown at substrate temperature of 350 ℃ possesses the best optoelectronic performance,with the largest grain size and the highest figure of merit.
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