龙 浩,张智超,顾锦华,王皓宁,丁楚伟,钟志有.组分渐变过渡层对氮化镓基发光二极管性能的影响[J].中南民族大学学报自然科学版,2017,(1):71-75
组分渐变过渡层对氮化镓基发光二极管性能的影响
Effect of Graded-Composition Transition Layer on the Performance of GaN-Based Light-Emitting Diodes
  
DOI:
中文关键词: 发光二极管  氮化镓  多量子阱  效率衰减
英文关键词: light-emitting diode  GaN  multiple quantum well  efficiency droop
基金项目:国家自然科学基金资助项目(11504436) ; 湖北省自然科学基金资助项目(2015CFB364) ; 中南民族大学中央高校基本科研业务费专项资金资助项目(CZW15045,CZQ16003)
作者单位
龙 浩1,张智超1,顾锦华2,王皓宁1,丁楚伟3,钟志有1 1 中南民族大学 电子信息工程学院武汉 430074; 2 中南民族大学 实验教学与实验室管理中心武汉 430074;3 武汉光驰教育科技股份有限公司武汉 430205 
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中文摘要:
      针对半导体发光二极管( LED) 中普遍存在的效率衰减效应严重影响大注入电流条件下LED 发光性能的 问题,在传统 InGaN/GaN 多量子阱 LED 基础上,设计了组分渐变过渡层结构,引入到量子垒和电子阻挡层界面。 模拟计算结果表明: 当引入过渡层后,量子垒和电子阻挡层界面处的电子势阱深度和空穴势垒高度减小,有益于有 源区载流子浓度的提高,有效提升了量子阱内辐射复合速率,使发光效率衰减现象得到显著改善. 研究结果对大功 率发光二极管的结构设计和器件研发具有启发作用.
英文摘要:
      The efficiency-droop phenomenon in semiconductor light-emitting diodes ( LEDs) still hinders the further development of high-brightness LEDs for the performance suppression at a high injection current. In this work, based on the conventional InGaN /GaN multiple-quantum-well LEDs, a graded-composition transition layer was designed and inserted between the quantum barrier ( QB) and the electron blocking layer ( EBL) . The simulation results indicated that with the insert of the transition layer, the depth of electron potential well and the height of hole potential barrier at the interface between the QB and the EBL both decreased, which was conducive to the increase of carrier concentration in the active region, and then lead to an improvement of radiative recombination rates in quantum wells. Hence, the efficiency droop was suppressed. The research is illuminating for the structure design and device development of high-power LEDs.
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