顾锦华,陆 轴,康 淮.钼掺杂氧化锌薄膜的制备及其性能研究[J].中南民族大学学报自然科学版,2017,(2):66-72
钼掺杂氧化锌薄膜的制备及其性能研究
Preparation and Properties of Mo-Doped ZnO Thin Films Prepared by Magnetron Sputtering
  
DOI:
中文关键词: 掺杂氧化锌  薄膜  结构  光电性能
英文关键词: doped zinc oxide  thin film  structure  optoelectrical properties
基金项目:湖北省自然科学基金资助项目(2011CDB418);中南民族大学中央高校基本科研业务费专项资金资助项目(CZP17002)
作者单位
顾锦华1,陆 轴2,康 淮2 1 中南民族大学 实验教学与实验室管理中心武汉 430074; 2 中南民族大学 电子信息工程学院武汉 430074 
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中文摘要:
      采用掺氧化钼(MoO3)的氧化锌(ZnO)陶瓷靶作为溅射源材料,利用磁控溅射工艺制备了钼掺杂氧化锌 (MZO)透明导电氧化物(TCO)薄膜,通过X-射线衍射仪(XRD)、光分光光度计和四探针仪进行了测试表征,研究 了溅射功率对MZO薄膜结构、光学和电学性能的影响.结果表明: 所沉积的MZO薄膜样品均为六角纤锌矿结构, 并具有(002) 择优取向生长特性,溅射功率对薄膜结构和光电性能具有不同程度的影响.当溅射功率为120 W时, MZO薄膜的可见光区平均透过率最高、电阻率最低、性能指数最大,具有最好的光电综合性能.
英文摘要:
      The transparent conductive thin films of Mo-doped ZnO ( MZO) were prepared by magnetron sputtering technique using a sintered ceramic target with a mixture of MoO3 and ZnO. The influence of sputtering power on the structural, electrical and optical properties of MZO thin films was analyzed by X-ray diffraction (XRD) ,four-point probe and optical transmission spectroscopy. The results indicate that all the deposited thin films have a hexagonal wurtzite structure and a (002) preferred orientation with the c-axis perpendicular to the substrate.The structural, optical and electrical properties of the thin films are closely related to the sputtering power.The MZO sample prepared at sputtering power of 120 W exhibits the best optoelectrical performance,with the highest average optical transmittance in the visible range, the lowest electrical resistivity and the maximum figure of merit.
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