钟志有, 康 淮, 陆 轴, 龙 浩, 王皓宁.掺杂对 ZnO 半导体薄膜光学性能的影响[J].中南民族大学学报自然科学版,2017,(3):61-67
掺杂对 ZnO 半导体薄膜光学性能的影响
Effect of Doping on Optical Properties of Zinc Oxide Semiconductor Thin Films
  
DOI:
中文关键词: 掺杂氧化锌  半导体薄膜  光学性能
英文关键词: doped zinc oxide  semiconductor thin films  optical properties
基金项目:国家自然科学基金资助项目( 11504436; 11704418) ; 湖北省自然科学基金资助项目( 2015CFB364) ; 中央高校基本科研业务费专项资金资助项目( CZP17002, CZW14019)
作者单位
钟志有, 康 淮, 陆 轴, 龙 浩, 王皓宁 中南民族大学 电子信息工程学院 智能无线通信湖北省重点实验室 武汉 430074 
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中文摘要:
      以掺杂氧化锌(ZnO) 陶瓷靶为溅射源材料,采用射频磁控溅射技术在石英玻璃衬底上制备了掺杂 ZnO 系列半导体薄膜样品. 利用紫外-可见分光光度计测量了薄膜的透射光谱, 通过 Swanepoel 法确定了薄膜的折射率和消光系数,利用外推法获得了薄膜的光学带隙,研究了不同掺杂对 ZnO 薄膜光学性能的影响.结果表明,钛掺杂和 镓镁合掺后,ZnO 薄膜的透过率和光学带隙增加而折射率减小; 所有薄膜的折射率均随波长增加而单调减小,呈现出正常的色散特性.
英文摘要:
      The semiconductor thin films of doped zinc oxide ( ZnO) were prepared on the quartz glass substrates by radio frequency magnetron sputtering technique. The optical transmission spectra of the thin films were measured with ultravioletvisible spectrophotometer. The refractive index and extinction coefficient of the thin films were determined using the Swanepoel method, and the optical bandgaps of the thin films were calculated by the extrapolation method. The effect of doping on the optical properties of the ZnO thin films was investigated. The results show that the refractive index of all the thin films exhibits the normal dispersion characteristics. The doped ZnO thin films possess a high transmittance, large optical bandgap and low refractive index compared to undoped ZnO thin films.
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