顾锦华,朱 雅, 陆 轴, 康 淮.镓镁锌氧化物透明导电薄膜的制备及其表征[J].中南民族大学学报自然科学版,2018,(4):88-94
镓镁锌氧化物透明导电薄膜的制备及其表征
Preparation and Characterization of Gallium MagnesiumZinc Oxide Transparent Conductive Thin Films
  
DOI:10.12130/znmdzk.20180418
中文关键词: 磁控溅射  掺杂氧化锌  透明导电薄膜
英文关键词: magnetron sputtering  doped zinc oxide  transparent conductive thin film
基金项目:湖北省自然科学基金资助项目( 2011CDB418) ; 中央高校基本科研业务专项资金资助项目( CZP17002)
作者单位
顾锦华1,朱 雅2, 陆 轴2, 康 淮2 1 中南民族大学 实验教学与实验室管理中心武汉 430074
2 中南民族大学 电子信息工程学院武汉 430074 
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中文摘要:
      采用磁控溅射方法制备了镓镁锌氧化物(GaMgZnO) 透明导电薄膜,通过 X 射线衍射仪、四探针仪和分光光度计的测试分析,研究了沉积温度对 GaMgZnO 薄膜微观结构和电光性能的影响.结果显示: 所制备的样品均为六角纤锌矿结构的多晶薄膜并具有c轴择优取向生长特点,其结晶质量和电光性能与沉积温度密切相关.当沉积温度为 550 K 时,GaMgZnO 薄膜的晶粒尺寸最大(51.72 nm) 、晶格应变最小(1.11×10-3)、位错密度(3.73×10-3line·m-2) 、电阻率最低(1.63×10-3 Ω·cm) 、可见光区平均透过率(82.41%) 、品质因数最大(5.06×102 Ω-1·cm-1) ,具有最好的结晶质量和光电综合性能.另外采用光学表征方法 获得了薄膜样品的光学能隙, 结果表明由于受 Burstein-Moss 效应的影响,GaMgZnO薄膜的光学能隙均大于未掺杂ZnO的数值.
英文摘要:
      Gallium magnesium zinc oxide (GaMgZnO) transparent conductive thin films were prepared by magnetron sputtering method. The influence of deposition temperature on the structural and electro-optical properties of the thin films was studied by X-ray diffraction (XRD) , four-point probe and ultraviolet-visible spectrometer. The results show that all the thin films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The deposition temperature significantly affects the crystal quality and electro-optical properties of thin films.When the deposition temperature is at 550 K, the GaMgZnO thin film has the best crystalline quality and electro-optical properties, with the maximum grain size (51.72 nm) , the minimum lattice strain (1.11 × 10-3 ) , the lowest dislocation density (3.73 × 1014 line· m-2 ) and resistivity (1.63 × 10-3 Ω · cm) , and the highest average visible transmittance (82.41%) and figure of merit ( 5.06×102 Ω-1·cm-1 ) . Furthermore, the optical energy gap of the deposited films were determined and observed to be larger than that of undoped ZnO due to Moss-Burstein effect.
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