钟志有,朱雅.不同压强下制备镓-镁共掺杂氧化锌薄膜的性能研究[J].中南民族大学学报自然科学版,2019,38(1):107-111
不同压强下制备镓-镁共掺杂氧化锌薄膜的性能研究
The properties of Ga-Mg co-doped zinc oxide thin films prepared at different pressures
  
DOI:10.12130/znmdzk.20190119
中文关键词: 磁控溅射  掺杂氧化锌  压强  内应力
英文关键词: magnetron sputtering  doped zinc oxide  pressure  internal stress
基金项目:湖北省自然科学基金资助项目(2011CDB418); 中央高校基本科研业务费专项资金资助项目(CZP17002)
作者单位
钟志有,朱雅 中南民族大学 电子信息工程学院, 智能无线通信湖北省重点实验室, 武汉 430074 
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中文摘要:
      以镓-镁掺杂的氧化锌(ZnO)陶瓷靶作为溅射源,采用磁控溅射技术在玻璃基片上沉积镓-镁共掺杂ZnO(ZnO:Ga-Mg)薄膜样品。通过X射线衍射(XRD)和扫描电子显微镜(SEM)的测试表征,研究了压强对ZnO:Ga-Mg样品结构性质和薄膜内应力的影响。结果表明,所有薄膜样品均为六角纤锌矿晶体结构并具有(002)择优取向生长特性,压强对其结晶性能和内应力具有明显的影响。当压强为3.5?Pa时,ZnO:Ga-Mg薄膜样品具有最强的(002)衍射峰、最大的平均晶粒尺寸、最小的张应力和最好的晶体质量。
英文摘要:
      The Ga-Mg co-doped zinc oxide (ZnO:Ga-Mg) thin films were deposited on glass substrates by magnetron sputtering technique, using the ceramic target fabricated by sintering the mixture of Ga2O3, MgO and ZnO nanometer powder. The influence of pressure on structure properties and internal stress of the samples was investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that all the samples are polycrystalline with a hexagonal structure, and that the pressure significantly affects the preferred growth orientation and internal stress of the thin films. When the pressure is 3.5?Pa, the ZnO:Ga-Mg thin film has the strongest (002) diffraction peak, the largest average grain size, the lowest tensile stress and the best crystal quality.
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