镓-镁共掺杂氧化锌薄膜的制备及其结构性能
Preparation and Structural Properties of Ga-Mg Co-doped ZnO Thin Films
投稿时间:2018-12-27  修订日期:2018-12-27
DOI:
中文关键词: 磁控溅射  掺杂氧化锌  薄膜  内应力
英文关键词: magnetron sputtering  doped zinc oxide  thin films  internal stress
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作者单位E-mail
钟志有 中南民族大学 电子信息工程学院 zhongzhiyou@163.com 
朱 雅 中南民族大学 电子信息工程学院  
陆 轴 中南民族大学 电子信息工程学院  
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中文摘要:
      以镓-镁掺杂的氧化锌(ZnO)陶瓷靶作为溅射源,采用磁控溅射技术在玻璃基片上沉积镓-镁共掺杂ZnO(ZnO:Ga-Mg)薄膜样品。通过X射线衍射(XRD)和扫描电子显微镜(SEM)的测试表征,研究了工作压强对ZnO:Ga-Mg样品结构性质和薄膜内应力的影响。结果表明,所有薄膜样品均为六角纤锌矿晶体结构并具有(002)择优取向生长特性,工作压强对其结晶性能和内应力具有明显的影响。当工作压强为3.5SPa时,ZnO:Ga-Mg薄膜样品具有最强的(002)衍射峰、最大的平均晶粒尺寸、最小的张应力和最好的晶体质量。
英文摘要:
      The Ga-Mg co-doped zinc oxide (ZnO:Ga-Mg) thin films were deposited on glass substrates by magnetron sputtering technique, using the ceramic target fabricated by sintering the mixture of Ga<sub>2</sub>O<sub>3</sub>, MgO and ZnO nanometer powder. The influence of working pressure on structure properties and internal stress of the samples was investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that all the samples are polycrystalline with a hexagonal structure, and that the working pressure significantly affects the preferred growth orientation and internal stress of the thin films. When the working pressure is 3.5SPa, the ZnO:Ga-Mg thin film has the strongest (002) diffraction peak, the largest average grain size, the lowest tensile stress and the best crystal quality.
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