掺锡In<sub>2</sub>O<sub>3</sub>薄膜的晶粒生长及其微观结构性质研究
Grain Growth and Microstructural Properties of Tin Doped In<sub>2</sub>O<sub>3</sub> Thin Films
投稿时间:2019-02-28  修订日期:2019-02-28
DOI:
中文关键词: 掺锡In2O3  薄膜  微观结构性质
英文关键词: tin doped In2O3  thin film  microstructural properties
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作者单位E-mail
钟志有 中南民族大学 电子信息工程学院 zhongzhiyou@163.com 
陆 轴 中南民族大学 电子信息工程学院  
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中文摘要:
      以氧化锡(SnO2)掺杂的氧化铟(In2O3)陶瓷靶作为溅射源材料,利用射频磁控溅射工艺在普通玻璃基底上沉积了掺锡In2O3(In2O3:Sn)薄膜样品,通过X射线衍射(XRD)、X射线光电子能谱(XPS)和扫描电子显微镜(SEM)测试表征,研究了基底温度对薄膜结晶性质和微观结构性能的影响。结果表明,所有In2O3:Sn样品均具有体心立方的多晶结构,基底温度对晶粒生长特性和微观结构性能具有明显的影响。基底温度升高时,薄膜沿(222)晶面的织构系数和平均晶粒尺寸先增后减,而位错密度和晶格应变则先减后增。当基底温度为250°C时,In2O3:Sn样品的(222)晶面织构系数最高、平均晶粒尺寸最大、位错密度最小、晶格应变最低,薄膜具有最佳的(222)晶面择优取向生长特性和微观结构性能。
英文摘要:
      The thin films of tin doped indium oxide (In2O3:Sn) were deposited on glass substrates by radio-frequency magnetron sputtering technique using a sintered ceramic target with a mixture of SnO2 and In2O3. The effect of substrate temperature on the crystalline characteristics and mirostructural properties of In2O3:Sn samples was analyzed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM), respectively. The results indicate that all the samples are polycrystalline in nature having a cubic bixbyite type crystal structure. The crystalline and mirostructural properties of the samples are observed to be subjected to the substrate temperature. With the increment of substrate temperature, the texture coefficient of (222) plane and average crystallite size rise in advance then fall, but the dislocation density and lattice strain take on a opposite trend. When the substrate temperature is 250°C, the In2O3:Sn sample exhibits the best crystalline and microstructural properties, with the highest texture coefficient of (222) plane, the largest average crystallite size, the minimum dislocation density and the lowest lattice strain.
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