射频功率对MgO掺杂镓锌氧化物薄膜性能的影响
Effect of radio-frequency power on the characteristics of MgO doped gallium-zinc oxide thin films
投稿时间:2019-05-05  修订日期:2019-05-05
DOI:
中文关键词: 镓锌氧化物  掺杂  电学性能
英文关键词: gallium-zinc oxide  doping  electrical properties
基金项目:
作者单位E-mail
顾锦华 中南民族大学 实验教学与实验室管理中心 jinhwagu@163.com 
陆轴 中南民族大学 电子信息工程学院  
陈首部 中南民族大学 电子信息工程学院  
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中文摘要:
      采用磁控溅射技术制备了MgO掺杂镓锌氧化物薄膜样品,通过X射线衍射(XRD)、电阻率、载流子浓度和Hall迁移率测试分析,研究了射频功率对薄膜样品微观结构和电学特性的影响。实验结果表明,所有样品均为六角纤锌矿结构并具有明显的c轴择优取向生长特点,其微观结构和电学特性与射频功率密切相关。当射频功率为125SW时,所制备薄膜的晶粒尺寸最大为52.1Snm、张应力最小为0.082SGPa、电阻率最低为1.54′10-3SW×cm、载流子浓度最大为5.26′1020Scm-3、Hall迁移率最高为7.41Scm2×V-1×s-1,具有最优的结晶性质和电学性能。
英文摘要:
      The thin films of MgO doped gallium-zinc oxide were prepared using magnetron sputtering technique. The effect of radio-frequency power on the microstructure and electrical characteristics of the deposited thin films was investigated by X-ray diffraction (XRD), electrical resistivity, carrier concentration and Hall mobility measurements. The experimental results demonstrate that all the deposited thin films have hexagonal wurtzite structure with highly c-axis orientation. The radio-frequency power significantly affects the microstructure and electrical characteristics of the deposited thin films. When the radio-frequency power of 125SW, the thin film possesses the best crystalline quality and electrical characteristics, with the largest crystallite size of 52.1Snm, the minimum tensile stress of 0.082SGPa, the lowest electrical resistivity of 1.54′10-3SW×cm, the maximum carrier concentration of 5.26′1020Scm-3 and the highest Hall mobility of 7.41Scm2×V-1×s-1.
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