狄拉克半金属中的电调古斯-汉欣效应
Electrically tunable Goos-Hänchen shift in Dirac semimetal
投稿时间:2019-12-14  修订日期:2019-12-14
DOI:
中文关键词: 狄拉克半金属  古斯-汉欣效应
英文关键词: Dirac semimetal  Goos-Hänchen effect
基金项目:中央高校基本科研业务费专项资金资助项目(CZQ19002)
作者单位E-mail
曹振洲 电信学院 zhenzhoucao@hotmail.com 
肖之伟 电信学院  
王国飞 电信学院  
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中文摘要:
      古斯-汉欣位移在光束反射中有重要意义。本文理论和数值仿真研究了狄拉克半金属的线偏振光古斯-汉欣位移。通过区分电介质函数的实部,狄拉克半金属的响应分为高损和低损电介质响应、金属响应。发现仅在金属响应区大的相位跃变才能引起大的古斯-汉欣位移,该结果为红外滤波提供方案。在金属响应区,TE偏振的古斯-汉欣位移总是为正值并且接近零,而TE偏振的古斯-汉欣位移随着费米能的增大总是负的且有最小值。通过电调狄拉克半金属的费米能,其电介质函数和古斯-汉欣位移可以被操控,反之古斯-汉欣位移可以用来测量费米能。
英文摘要:
      Goos-H?nchen (GH) shift is significant in the reflection of optical beams. Here the GH shift of the linearly polarized light incident on Dirac semimetal is theoretically and numerically investigated. Through distinguishing the real part of the dielectric function, Dirac semimetal is identified as the high and low loss dielectric response, and the metallic response. It is found that the large phase jump causes the large GH shift only in the metallic region, which may provide a strategy for infrared filtering. And in the metallic region, the TE polarized GH shifts are always positive and close to zero, while the TM polarized GH shifts accompanied by an increasing Fermi energy are always negative and only of minimal values. By electrically tuning the Fermi energy of Dirac semimetal, the dielectric function and GH shifts can be manipulated, and inversely the GH shifts can be used to measure Fermi energy.
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